Nondoped and (Al, Sb)-doped CdTe thin films with 0.5, 1.5, and 2.5 wt.%, respectively, were deposited by thermal evaporation technique under vacuum onto Corning 7059 glass at substrate temperatures () of room temperature (RT) and 423 K. The optical properties of deposited CdTe films such as band gap, refractive index (n), extinction coefficient (), and dielectric coefficients were investigated as function of Al and Sb wt.% doping, respectively. The results showed that films have direct optical transition. Increasing and the wt.% of both types of dopant, the band gap decrease but the optical is constant asn, and real and imaginary parts of the dielectric coefficient increase.
ABSTRACT:In this work, optical properties for thin doped ZnO films , prepared by pulse laser deposition (PLD) technique have been investigated as a function of various Ti concentrations( 0, 2, 4, 6, 8 and10) wt %. This study shows that the films have energy gap decreases from 3.3 eV to 2.4eVwith increasing Ti concentration from 0 to 10 wt%. The optical constants which are refractive index, extinction coefficient, real and imaginary constants were varied upon doping ZnO thin films with different Ti concentrations.
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