Articles you may be interested inIn situ investigations of the metal/silicon reaction in Ti/Si thin films capped with TiN: Volumetric analysis of the C49-C54 transformation A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines J. Appl. Phys. 78, 7040 (1995); 10.1063/1.360407 C49/C54 phase transformation during chemical vapor deposition of TiSi2

A simple and novel scheme is presented for the formation of -4 nm gate dielectric films with nitrogen at the top (gate electrode/dielectric) interface. It consists of low-temperature, remote, high-density N2-plasma nitridation of thermal SiOz, followed by a post-nitridation anneal. The key results are: (a) high N concentrations (10-20at.%) incorporated uniformly within -0.7 nm of the oxide surface, (b) little Vfb-shift and no significant variation in midgap-Dit from that of control oxide, (c) suppression of B-penetration for high B levels and for high thermal budgets including a hydrogen ambient, and (d) no evidence of damage to the oxide.

No abstract

No abstract