AlGaAsSb/InGaAsSb single-quantum-well (SQW) laser diodes emitting at 2 μm were fabricated and tested. At 10–15 °C, the uncoated SQW lasers with 2–3 mm cavity lengths exhibit a threshold current density of 115 A/cm2, a continuous-wave output power of 1.9 W, a differential efficiency of 53%, and a quasi-continuous-wave output power of 4 W. Their performance deteriorates rapidly as output losses increase beyond 10 cm−1.

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