Very-thin-film kinetics data are presented for oxide growth on parent epitaxially formed (100) copper crystals at 25 and 50 • C with different oxygen pressures in the range 0.01 torr to 170 torr. The results are interpreted in terms of the model based on electric-field driven ionic diffusion associated with the electrostatic-potential difference created by an electron-tunnelcurrent-virtual equilibrium.
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