Superlattice-structured Bi4Ti3O12- PbBi4Ti4O15 single crystals were grown, and their properties of polarization hysteresis and leakage current along the a axis were investigated. Oxidation annealing led to a marked increase in leakage current, while annealing in N2 atmosphere yielded a marked decrease in leakage current at room temperature. These results show that electron hole is the dominant carrier for the leakage current. A well-saturated polarization hysteresis with a remanent polarization of 41 μC/cm2 was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi2O2 layers.

Single crystals of superlattice‐structured ferroelectrics composed of Bi4Ti3O12 and PbBi4Ti4O15 were grown and the properties of polarization hysteresis and leakage current along the a‐axis were investigated. Oxidation treatment led to a marked increase in leakage current at room temperature, showing that electron hole acts as a detrimental carrier for electrical conduction. A well‐developed polarization hysteresis with a remanent polarization of 41 μC/cm2 was observed, which is suggested to originate from the peculiar ferroelectric displacement of Bi in the Bi2O2 layers.

Super lattice-structured Bi 4 Ti 3 0 12 -PbBi 4 Ti 4 0 15 single crystals were grown, and the effects of oxidation and reduction of the polarization hysteresis and leakage current along the a axis were investigated at room temperature. High P 02 annealing gave rise to an increase in leakage current, while annealing in N 2 atmosphere yielded a marked decrease in leakage current. These results show that electron hole is the dominant carrier for the leakage current. A well-saturated polarization hysteresis with a remanent polarization of 41 J1Cicm 2 was observed for air-annealed crystals, which is suggested to originate from the peculiar ferroelectric displacement ofBi in the Bi202 layers.