The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16pm COM2 digital CMOS process which features 1.5V NMOS and PMOS transistors with 2.4nm gate oxide, 0.135pm gate length, and up to 7 metal levels. Technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.

No abstract

No abstract

No abstract

No abstract