Space-charge-limited current behaviour is reported for the temperature range 200K to 350K in undoped p-GaSe, parallel to the c axis, for samples showing the most frequently observed activation energy. The conduction is found to be extrinsic, (NA-ND)=3*1016 m-3 and the dominant hole level is a single discrete trap with Et=0.195 eV and Nt=4*1022 m-3.

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Frequency dependence of the complex susceptibility for a Bridgman-Stockbarger (B-S) grown p-GaSe single crystal parallel to c-axis (//c) and perpendicular to c-axis (⊥c) over seven decades (10-3-104 Hz), together with temperatures ranging from 300-450 K, has provided experimental data relating to the dynamic response of slow transition. The crystal has exhibited low-frequency dispersion (LFD) for //c and ⊥c, with a buried loss peak due to an unknown process, and no single mechanism appears to be responsible for this. The LFD activation energies for hopping charge carriers for //c and ⊥c are found to be 0.66±0.02 eV and 0.79±0.02 eV, respectively. Only slight anisotropy in the dielectric response is observed in the measured temperature range.

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