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Metal−insulator-transition (MIT) of VO 2 has attracted strong attention as a potential phenomenon to be utilized in nanostructured devices. Dynamics of MIT phase transition determines the feasibility of VO 2 material properties in various applications, for example, photonic components, sensors, MEMS actuators, and neuromorphic computing. However, conventional interface strain model predicts the MIT effect accurately for bulk, but fairly for the thin films, and thus, a new model is needed. It was found that the VO 2 thin film−substrate interface plays a crucial role in determining transition dynamics properties. In VO 2 thin films on different substrates, coexistence of insulator-state polymorph phases, dislocations, and a few unit cell reconstruction layer form an interface structure minimizing strain energy by the increase of structural complexity. As a consequence, MIT temperature and hysteresis of structure increased as the transition enthalpy of the interface increased. Thus, the process does not obey the conventional Clausius−Clapeyron law anymore. A new model is proposed for residual strain energy potentials by implementing a modified Cauchy strain. Experimental results confirm that the MIT effect in constrained VO 2 thin films is induced through the Peierls mechanism. The developed model provides tools for strain engineering in the atomic scale for crystal potential distortion effects in nanotechnology, such as topological quantum devices.

Dielectric properties of nanocrystalline Nd-modified Pb(Zr x Ti 1-x )O 3 thin films were studied in frequency range f = 100 Hz -20 GHz. Thin films were prepared by pulsed laser deposition on MgO(100) substrates. Inter-digital electrodes and coplanar waveguide transmission line technique were used for dielectric characterization. In the dielectric function ε r (f, T), two interesting anomalies were found at low frequencies. Diffusive phase transition had relaxor-type behaviour, and an extra dielectric relaxation maxima were found below Curie temperature T C . At higher frequencies above 5 GHz, relative permittivity ε r (f) response was flat up to 20 GHz, and high maximum tunability n r,max = 19% was achieved.