In order to understand ferromagnetic ordering in SiC-based diluted magnetic semiconductors, Fe-implanted 6H-SiC subsequently annealed was studied by Atom Probe Tomography, 57Fe Mössbauer spectroscopy and SQUID magnetometry. Thanks to its 3D imaging capabilities at the atomic scale, Atom Probe Tomography appears as the most suitable technique to investigate the Fe distribution in the 6H-SiC host semiconductor and to evidence secondary phases. This study definitely evidences the formation of Fe3Si nano-sized clusters after annealing. These clusters are unambiguously responsible for the main part of the magnetic properties observed in the annealed samples.

No abstract

International audienceThe Fe-implanted SiC is an interesting system in the DMS field although ion implantation induces strong microstructural defects needing post-implantation treatments for recovery. These post-implantation treatments often induce the formation of parasitic magnetic secondary phases. In this work, using XRD, SEM, TEM, CEMS and SQUID it is shown that post-annealing of Fe-implanted 6H-SiC at 380°C with a few 1016Fe+ ions/cm2 at 900°C/60min, 1000°C/85min and 1300°C/4min enhanced the ferromagnetic ordering which can be partially explained by the formation of iron rich superparamagnetic nanoparticles. (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim