Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiO x N y thin films grown by glass assisted CO 2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm -1 ) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm -1 ) with a FWHM of 73.863 cm -1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiO x N y /Si (111) and SiO x N y /Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 10 13 and 1.57 × 10 13 ev -1 ·cm -2 respectively.

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Fourier Transform Infrared (FTIR) Spectroscopy and Capacitance-Voltage measurements are used to characterize the chemical bonding configuration and crystallographic orientations for SiOxNy thin films grown by glass assisted CO2 laser. FTIR spectra detected the Si-O and Si-N strongest absorption bands are close to each other at wave number in the range (700-1000 cm-1) depending on silicon substrates, and Si-O stretching bond at wave number around (~1088.285 cm-1) with a FWHM of 73.863 cm-1 for the two samples, the presences of hydrogen impurities like Si-H and N-H in the films were also identified and calculated. From C-V measurement film thickness were calculated and found to be 19.2 and 17.2 nm for SiOxNy/Si(111) and SiOxNy/Si(100) respectively. From the flat band voltage of -5.4 and -1.3 measured the two samples, their interface trap densities were found to be 1.4 × 1013 and 1.57 × 1013 ev-1·cm-2 respectively.