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Objectives: To compute the polarizability and diamagnetic susceptibility values of a shallow donor in the valley -orbit split A 1 , T 2 , and E states of a many valley semiconductor. Methods/ findings: We demonstrate the enhanced values of the above quantities in the excited states, which clearly indicate a catastrophic behavior when Metal-Insulator Transition is approached. In intense magnetic fields, the polarizability values decrease as the system behaves like a harmonic oscillator. In an electric field, the magnitude of the diamagnetic susceptibility values increases.

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