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The Cu2O-based homostructure thin film was successfully fabricated on FTO glass substrate using conventional electrodeposition method. Prior to the p-Cu2O thin film deposition, cyclic voltammetry (CV) measurement was carried out in order to obtain optimum deposition parameter. Based on the CV result, p-Cu2O thin film was deposited on n-Cu2O with deposition potential of −0.4 V vs Ag/AgCl, solution temperature of 40 • C and pH 12.5, respectively. The deposition time was varied and it was found that the optimum deposition time for Cu2O-based homostructurethin film was 2 h. Structural, morphological, and optical properties were characterized using Xray diffraction, field emission-scanning electron microscope and ultraviolet and visible absorption spectroscopy, respectively. The successful fabrication of homostructure was confirmed using photoelectrochemical measurement.

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