The concept of local electronegativity defined by Lucovsky1) was modified and applied to the study of the chemical bonds at and near the SiO2/Si interface. Even for a flat interface and no Si-Si bond in the oxide film, chemical bonds different from those in the bulk are found to exist not only at the interface, but also near the interface. The local electronegativities of silicon and oxygen atoms change their magnitudes within 1 nm of the interface.

No abstract

PROCESS TECHNOLOGYA novel EEPROM cell structure is roposed, 0.8 pm minimum feature size. The cell fabricated has sufficient cell threshold windows which extend to more than 5 volts and program cell current of more than 80 pA at nominal program voltage of 12 volts. The cell endurance is more than lo4 erase/write cycles. Using this cell structure 4 mega bit full feature EEPROM can be acquired.which realizes a small cell size of 9.72 pn ! by using INTRODUCTION

No abstract

No abstract