M. P. Sinyukov scite author profile

The firstand second-order Raman scattering by phonons has been investigated in a-Sn as a function of scattering photon energy. A resonant behavior of both firstand second-order processes has been found near the E, + 6, gap (-1.85 eV) and a resonance of the first-order process near E, (3.7 eV). The scattering by 2I (0) phonons develops a peak near resonance in a manner similar to that found for Ge and Si. The results are interpreted in terms of twoand three-band scattering processes.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

M. P. Sinyukov

Resonant Raman scattering in InP

Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations

Resonant first- and second-order Raman scattering in gray tin

Contact Info

Product

Resources

About