No abstract

Single crystal GaN substrates were grown by Hydride-Metal Organic Vapor Phase Epitaxy (H-MOVPE) on nearly lattice matched LiGaO 2 substrates. The key to obtain high quality GaN films on LiGaO 2 was the initial surface nitridation step. A self-separating technique was developed that leaves free-standing flat single crystal GaN without using mechanical or chemical removal of the underlying substrate. It was determined that the surface nitridation and cooling processes were critical in film±substrate self-separation.