The low-temperature photoluminescence (PL), photodiffusion current, photoconductivity (PC), and nuclear quadrupolar resonance spectra of the layered PbI2 single crystals and Pb1−XCdXI2 alloys were investigated. It was shown that the alloys are formed for any composition ratio and they have monopolar (hole) PC. The exciton PL band energy depends linearly on the composition ratio. It was found that the PbI2 clusters with various sizes are formed in Pb1−XCdXI2 alloys. For X≤0.50 the clusters are large [more than the Bohr radius of exciton in PbI2 (RB)] while for X=0.50 they are both large and small (smaller than RB). It was shown that these clusters are formed within the crystal layer. For Pb1−XCdXI2 alloys with X=0.70 the broad PL band at 2.1 eV is observed. This band is caused by the formation of the self-trapping excitons in PbI2 clusters. It was found that this PL band determines the emission of the alloys at T=300 K.

For the first time photo‐electromotive force (photo‐EMF) measurements were carried out for CdTe crystals doped with V atoms as a result of the photogeneration of carriers from deep impurity centers to the conduction band. Tilted geometry was applied that allowed two‐dimensional monitoring of the vi‐ bration source. The CdTe:V crystals were excited by a He–Ne laser with a wavelength of 1.15 μm (ħω = 1.08 eV) and P = 2 mW. The mechanism of the appearance of the holographic current in the CdTe:V crystals taking into account real defect structure was proposed. The frequency dependence of the ac photo‐EMF (holographic) current for the CdTe:V crystals was measured. It was shown that a low cut‐off frequency for a laser intensity I = 0.2 mW/mm2 equals 6.0 kHz, which corresponds to a response time of 26 μs. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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