Thin films and nanotubes of iron oxide are deposited using atomic layer deposition (ALD) on Si(100) and anodic aluminum oxide (AAO), respectively. Ferrocene, Fe(Cp) 2 , and oxygen are used as precursors. Successful depositions are carried out in the temperature range 350-500 -C on Si(100), while all depositions on AAO are made at 400 -C. The growth per cycle values are around 0.14 nm on Si(100) in the temperature range 350-500 -C and 0.06 nm on AAO. Below 500 -C, the iron oxide crystallizes as a phase mixture on both types of substrates. One of the phases is identified as the rhombohedral Fe 2 O 3 phase (hematite), but the second phase cannot be unambiguously identified. Above 500 -C, only phase pure hematite is detected. For deposition of nanotubes, in-house made AAO membranes are used, having an aspect ratio of 30. By etching of the AAO membranes after deposition, free-standing nanotubes retaining the order of the AAO template can be fabricated.