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This article describes a study on the influence construction and technology on the time stability of neutron sensors developed at the Institute of Electron Technology, and was prepared the need to eliminate the dark current growth in longterm use, not associated with radiative exposures.After analyzing the construction of detectors makes some changes to technological processes. To improve the assembly technology changed the type of converter (hard wax is replaced with a soft petroleum jelly) and introduced the foam insert to the casing of the sensor in order to avoid mechanical stresses in the structure. These stresses occur as a result of thermal shrinkage of wax (almost abrupt change of state from liquid to crystalline phase), which caused the piezoelectric effect. After conducting structural and technological changes detectors were long-term electric load.

One of the key parameters determining detection properties of silicon PIN detector structures (pThe paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ