Bi doped and Bi and Yb codoped CdTe crystals grown by the Bridgman method have been characterized by cathodoluminescence (CL) in the scanning electron microscope. CL images show a dense network of highly decorated grain boundaries in the Bi doped samples and dopant striations in the codoped crystals, attributed to the presence of Yb. Bi contributes to the appearance of the A luminescence band at 1.43 eV. The influence of Yb dopant on the CL spectra is discussed.
The resistivity and electron lifetime of CdTe:Ge:Yb crystals are reported, demonstrating that the effect of Yb concentration is crucial for accurate electrical compensation. It is also demonstrated that the codoping of CdTe with Ge as deep donor and with Yb as rare-earth element could be a promising way to obtain semiinsulating CdTe crystals with good transport properties. High resistivity (5×109Ωcm) and lifetime (9μs) were obtained, thus confirming the beneficial effect of rare-earth doping.
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