Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr0.52Ti0.48)O3] substrate plates. Electric fields up to ±2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive field by over 30%. We also demonstrate that alternating in-plane tensile and compressive strains (less than 0.01%) can be used to propagate magnetic domain walls. This ability to manipulate high anisotropy magnetic thin films could prove useful for lowering the switching energy for magnetic elements in future voltage-controlled spintronic devices.

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A nanocomposite fi lm of La 0.67 Sr 0.33 MnO 3 (LSMO):ZnO is synthesized by depositing LSMO solution on a vertical array of ZnO nanorods grown on (0001) Al 2 O 3 substrate. The magnetic behavior of the composite fi lm differs from that of a pure LSMO fi lm, possibly due to smaller grain size in the composite, small amount of Zn doping, or the presence of nonmagnetic ZnO phase near the LSMO grain boundaries. Magnetotransport measurements show that the low-fi eld magnetoresistance (LFMR) of the nanocomposite fi lm is signifi cantly enhanced as compared to that observed for pure LSMO fi lm. The highest value of the LFMR of the nanocomposite fi lm at 10 K is -23.9% with a magnetic fi eld of 0.5 T applied parallel to the current.

The ability to tune both magnetic and electric properties in magnetoelectric (ME) composite heterostructures is crucial for multiple transduction applications including energy harvesting or magnetic field sensing, or other transduction devices. While large ME coupling achieved through interfacial strain-induced rotation of magnetic anisotropy in magnetostrictive/piezoelectric multiferroic heterostructures has been demonstrated, there are presently certain restrictions for achieving a full control of magnetism in an extensive operational dynamic range, limiting practical realization of this effect. Here, we demonstrate the possibility of generating substantial reversible anisotropy changes through induced interfacial strains driven by applied electric fields in magnetostrictive thin films deposited on (0 1 1)-oriented domain-engineered ternary relaxor ferroelectric single crystals with extended temperature and voltage ranges as compared to binary relaxors. We show, through a combination of angular magnetization and magneto-optical domain imaging measurements, that a 90° in-plane rotation of the magnetic anisotropy and propagation of magnetic domains with low applied electric fields under zero electric field bias are realized. To our knowledge, the present value attained for converse magnetoelectric coupling coefficient is the highest achieved in the linear piezoelectric regime and expected to be stable for a wide temperature range, thus representing a step towards practical ME transduction devices.

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