Our unique, high‐efficiency c‐Si solar cell, named the HIT cell, has shown considerable potential to improve junction properties and surface passivation since it was first developed. The improved properties in efficiency and temperature dependence compared to conventional p – n diffused c‐Si solar cells are featured in HIT power 21TM solar cell modules and other applications which are now on the market. In the area of research, further improvement in the junction properties of the a‐Si/c‐Si heterojunction has been examined, and the highest efficiency to date of 20.1% has recently been achieved for a cell size of 101 cm2. The high open circuit voltage exceeding 700 mV, due to the excellent surface passivation of the HIT structure, is responsible for this efficiency. In this paper, recent progress in HIT cells by Sanyo will be introduced. Copyright © 2000 John Wiley & Sons, Ltd.

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A new type of ultralight flexible a-Si solar cell fabricated on a transparent polyimide film substrate, has been developed. High photoconductivity (σph) of 2×10-5 Ω-1 cm-1 and high photosensitivity (σph/σd) of 1×106 were obtained with a-Si films deposited by H2-dilution of SiH4 on a transparent polyimide film substrate at 180°C. Prebaking the transparent polyimide film substrate effectively reduced the impurity content of the a-Si film. A maximum output power of 550 mW and a power-to-weight ratio of 275 mW/g were obtained for an integrated-type a-Si solar cell with a size of 110×115 mm.

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