A novel class of lamellar structured polyhedral oligomeric silsesquioxane/bisphenol Z (POSS/BPZ) polybenzoxazine (PBz) nanocomposites was successfully designed by a facile one-step copolymerization technique.

The continual development of microelectronics needs insulation materials with lower dielectric constant (low k).

The value of the dielectric constant of bisphenol-Z (BPZ) polybenzoxazine (PBz) material was reduced by the reinforcement of graphene oxide into the BPZ-PBz matrix by exploiting the concept of polarization to enable its usage as a dielectric in microelectronics applications.