Carbon-based 0D materials have shown tremendous potential in the development of biomedical applications of the next generation. The astounding results are primarily motivated by their distinctive nanoarchitecture and unique properties. Integrating these properties of 0D carbon nanomaterials into various polymer systems has orchestrated exceptional potential for their use in the development of sustainable and cutting-edge biomedical applications such as biosensors, bioimaging, biomimetic implants and many more. Specifically, carbon dots (CDs) have gained much attention in the development of biomedical devices due to their optoelectronic properties and scope of band manipulation upon surface revamping. The role of CDs in reinforcing various polymeric systems has been reviewed along with discussing unifying concepts of their mechanistic aspects. The study also discussed CDs optical properties via the quantum confinement effect and band gap transition which is further useful in various biomedical application studies.
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In this paper, an integrable lateral trench dual gate metal-oxide-semiconductor (LTDGMOS), a power MOSFET on silicon-on-insulator (SOI) is presented. The device consists of two separate trenches built in a thin SOI substrate in which two gates are placed on both sides of the P-body region. The trench dual gate structure not only enhances the drain current due to parallel conduction of two channels but also causes reduced-surface-field effect in the device resulting significant improvement in all performance parameters. The performance of the proposed device is analyzed and compared with that of the conventional lateral MOSFET using 2D numerical simulations. The LTDGMOS provides 2.5 times higher output current, 27% decrease in threshold voltage, 29% reduction in specific ON-resistance (Ron-sp), 74% improvement in peak transconductance, 50% increase in breakdown voltage (Vbr), and 28% reduction in gate-drain charge density (Qgd) as compared to the conventional counterpart for the same cell pitch. The superior Vbr, Ron-sp, and Qgd of the proposed device yield an improvement of 300% and 50% in the figure-of-merits Vbr 2/Ron-sp and Ron-sp .Qgd, respectively over the conventional device.
Graphene-based materials have undergone substantial investigation in recent years owing to their wide array of physicochemical characteristics. Employment of these materials in the current state, where infectious illnesses caused by microbes have severely damaged human life, has found widespread application in combating fatal infectious diseases. These materials interact with the physicochemical characteristics of the microbial cell and alter or damage them. The current review is dedicated to molecular mechanisms underlying the antimicrobial property of graphene-based materials. Various physical and chemical mechanisms leading to cell membrane stress, mechanical wrapping, photo-thermal ablation as well as oxidative stress exerting antimicrobial effect have also been thoroughly discussed. Furthermore, an overview of the interactions of these materials with membrane lipids, proteins, and nucleic acids has been provided. A thorough understanding of discussed mechanisms and interactions is essential to develop extremely effective antimicrobial nanomaterial for application as an antimicrobial agent.
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