Articles you may be interested inInvestigation on dielectric properties of atomic layer deposited Al2O3 dielectric films J. Vac. Sci. Technol. A 32, 031509 (2014); 10.1116/1.4870593Frequency and gate voltage effects on the dielectric properties and electrical conductivity of Al/SiO2/p-Si metalinsulator-semiconductor Schottky diodes structures were fabricated with different interfacial layer thickness values (10, 25, and 53 nm) and admittance measurements of the structures were carried out between 1 kHz and 1 MHz in order to investigate the influence of interfacial layer thickness on dielectric properties of these structures. For the structure with thicker interfacial layer, higher dielectric constant (e 0 ) and dielectric loss (e 00 ) values were obtained at low frequencies. At high frequencies, these parameters tend to be saturated and become almost constant. Loss tangent versus frequency plots exhibit a peak and magnitude of the peak weakens with increasing frequency and shifts toward high frequency region. The dispersion in e 0 and e 00 with varying thickness at low frequencies was ascribed to interfacial polarization. In addition, obtained e 00 values indicated higher energy dissipation in the structure with thicker interfacial layer. Admittance data of the structures were also considered in terms of modulus formalism to interpret the relaxation processes in the structures. Moreover, dc electrical conductivity values were derived using frequency dependent ac electrical conductivity of the structures.

Al/Al2O3/p-Si Schottky barrier diodes (SBDs) were fabricated using atomic layer deposition technique in order to investigate dielectric properties of SBDs. For this purpose, admittance measurements were conducted at room temperature between −1 V and 3 V in the frequency range of 10 kHz and 1 MHz. In addition to the investigation of Al2O3 morphology using atomic force microscope, dielectric parameters; such as dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ), and real and imaginary parts of dielectric modulus (M′ and M″, respectively), were calculated and effect of frequency on these parameters of Al/Al2O3/p-Si SBDs was discussed. Variations in these parameters at low frequencies were associated with the effect of interface states in low frequency region. Besides dielectric parameters, ac electrical conductivity of these SBDs was also investigated.

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A Au/Bi4Ti3O12/n-Si structure is fabricated in order to investigate its current—voltage (I–V) characteristics in a temperature range of 300 K–400 K. Obtained I–V data are evaluated by the thermionic emission (TE) theory. Zero-bias barrier height (ΦB0) and ideality factor (n) calculated from I–V characteristics, are found to be temperature-dependent such that ΦB0 increases with temperature increasing, whereas n decreases. The obtained temperature dependence of ΦB0 and linearity in ΦB0 versus the n plot, together with a lower barrier height and Richardson constant values obtained from the Richardson plot, indicate that the barrier height of the structure is inhomogeneous in nature. Therefore, I–V characteristics are explained on the basis of Gaussian distribution of barrier height.

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