Power modules for several hundred amperes suffer from a high stray inductance compared to discrete setups at similar current density. The use of silicon carbide in such modules is beneficial but due to the high stray inductance, the switching speed must be reduced to keep the voltage overshoot below breakdown voltage. As a result, the semiconductor material cannot be fully utilised. To improve the utilisation in terms of power output, by strong over‐voltage reduction, reduced ringing, and highest switching speeds an asymmetric active snubber was introduced. This work targets an improved understanding of the active snubber by deriving analytical models to describe the behaviour during turn‐on and turn‐off and elaborate optimisation opportunities. The models are compared to measurements for validation and an improved loss estimation is derived as well as a prediction of the snubber voltage. Different modes of operation are investigated and compared to a similar DC‐snubber setup. Finally, the model is used to pre‐calculate the timing for optimal operation.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.