Min Gee Kim scite author profile

We fabricated metal-ferroelectric-metal capacitors and bottomgate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly-(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.

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Fabrication of a Paper Memory Transistor by Using a Solution Process

Kim

Han

Kim

et al. 2020

J. Korean Phys. Soc.

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Non-volatile Organic Ferroelectric Field-Effect Transistors Fabricated on Al Foil and Polyimide Substrates

Han

Kim

Park

2020

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Min Gee Kim

Transconductance Amplification by the Negative Capacitance in Ferroelectric-Gated P3HT Thin-Film Transistor

Nonvolatile organic field-effect transistors fabricated on Al foil substrates

Fabrication of a Paper Memory Transistor by Using a Solution Process

Non-volatile Organic Ferroelectric Field-Effect Transistors Fabricated on Al Foil and Polyimide Substrates

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