Recently, hybrid logic circuits based on magnetic tunnel junctions (MTJs) have been widely investigated to realize zero standby power. However, such hybrid CMOS/MTJ logic circuits suffer from a severe sensing reliability due to the limited tunnel magnetoresistance ratio (TMR ≤ 150%) of the MTJ and the large process variation in the deep sub-micrometer technology node. In this paper, a novel differential sensing amplifier (DSA) is proposed, in which two PMOS transistors are added to connect the discharging branches and evaluation branches. Owing to the positive feedback realized by these two added PMOS transistors, it can achieve a large sensing margin. By using an industrial CMOS 40 nm design kit and a physics-based MTJ compact model, hybrid CMOS/MTJ simulations have been performed to demonstrate its functionality and evaluate its performance. Simulation results show that it can achieve a smaller sensing error rate of 9% in comparison with the previously proposed DSAs with a TMR ratio of 100% and process variation of 10%, while maintaining almost the same sensing delay of 74.5 ps and sensing energy of 1.92 fJ/bit.