MoO3-induced oxidation in PEDOT:PSS hole contact enables improving its conductivity, work function and process compatibility for application in solution-processed transparent QD-LEDs, attaining a maximum luminous efficiency of 1.39 cd A−1and a transparency of >70%.

We report our efforts to develop high performing all-solution-processable transparent inverted QD-LEDs by interposing an interface dipole between the ZnO ETL and the quantum dot light-emitting layer.

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