A practical approach to fabricate textured GaNbased light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO 2 nanoparticles as the mask, textured LEDs can be fabricated. Both textured p-GaN and textured indium tin oxide LEDs show significant improvement over conventional LEDs without damaging the electrical characteristics. The results show that the method is promising for manufacturing low-cost high-efficient GaN-based LEDs.