Two novel crystal structures containing the eclipsed conformation of diaminylato type ligands and metal-metal bonds are described; bis[bis{ (phenanthrene-9,1O-diamin)ylato}cobalt( 11)] contains a Coll-Coll bond [2.689(1) A] and two 6 bonds between two pairs of parallel (phenanthrene-9,lO-diamin)ylato ligands and bis[ { (2,3-dicyanoethenediamin)ylato}dicarbonylrhodium(t)] contains a Rhl-Rhl bond [2.833(2) A] and one 6 bond between a pair of parallel (2,3-dicyanoethenediamin)ylato ligands.JC--~t interactions between highly conjugated molecules, e.g.

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Articles you may be interested inA heavy ion implanted pocket 0.10 μm ntype metal-oxide-semiconductor field effect transistor with hybrid lithography (electronbeam/deep ultraviolet) and specific gate passivation process

The mechanism and the optimization of nitrogen implantation for suppression the boron penetration in p+-poly-Si gate metal-oxide-semiconductor capacitor is reported. This nitrogen co-implantation process exhibits a good suppression of boron penetration and a better electrical characteristic than that of control sample. It was found that nitrogen combines with the boron to form a B-N complex, retarding the penetration of boron itself, was identified by XPS measurements. The optimum nitrogen dosage is also found in this study.

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