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Effective collision strengths for electron-impact excitation of Fe II are presented for all sextet-to-quartet transitions among the 38 L S states formed from the basis configurations 3d 6 4s, 3d 7 and 3d 6 4p. A total of 112 individual transitions are considered at electron temperatures in the range 30-100 000 K, encompassing values of importance for applications in astrophysics as well as laboratory plasmas. A limited comparison is made with earlier theoretical work and large differences are found to occur at the temperatures considered. In particular, it is found that the inclusion or omission of some (N + 1)-bound configurations in the Hamiltonian matrices describing the collision process can have a huge effect on the resulting effective collision strengths, by up to a factor of four in some cases.

In this letter, we present a scalable and efficient noise de-embedding procedure, which is based on transmission-line theory and cascade configurations, for on-wafer microwave measurements of silicon MOSFETs. The proposed de-embedding procedure utilizes one open and one thru dummy structures to eliminate the parasitic effects from the probe pads and the input/output interconnects of a device-under-test (DUT), respectively. This method can generate the scalable distributed interconnect parameters to efficiently and precisely remove the redundant parasitics of the DUTs with various device sizes and arbitrary interconnect dimensions.

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