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We successfully realized 14 inch flexible LCD display with FHD resolution. The LCD panel has the thickness less than 0.3 mm, which using new type of colorless PI as substrate. The flexibel LCD is IPS mode. The key technology includes the conbination of indium gallium zinc oxide (IGZO) TFT , Color filter on Array substrate(COA)and Black Photo Spacer(BPS).

In the paper, a fast coalescence growth is introduced to the epitaxial growth of GaN on silicon substrate. With the fast coalescence growth method, a thin low pressure GaN (LP-GaN) layer used as a function layer, the GaN film could coalesce quickly within a thin thickness, additionally, a smooth surface and high crystal quality could be achieved. With further investigation, it was found that the general GaN coalescence thickness was mainly influenced by the thickness and the growth pressure of the LP-GaN interlayer. And the LP-GaN interlayer has a critical thickness, if over the critical thickness, the crystal quality would degrade. At the same time, it is found that the GaN quality was not affected by the coalescence thickness with a thin LP-GaN interlayer under critical thickness.

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