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A 1.8-in. high-resolution passive matrix OLED (PMOLED) display panel has been successfully developed. We design the structure of full color PMOLED device. We pattern the device on a 128×3×160 pixel area, 384 row ITO anodes and 160 column cathode separators on ITO glass developed by us through photolithograph process. We have successfully fabricated the 1.8-in. 128×160 full color passive OLED display panel through our SUNICEL PLUS 200 OLED systems. The structure of OLED is a double-hetero structure. It has the device structure of ITO/2TNATA/NPB/ Alq 3 +C545T/Alq 3 /LiF/Al for green, ITO/2TNATA/ NPB/Alq 3 +Rubrene+DCJTB/ Alq 3 /LiF/Al for red, ITO/2TNATA/ NPB/EB43+TBPE/Alq 3 /LiF/Al for blue. The PMOLED display panel has full color emission with a resolution of 128×160, and the brightness of 200 cd/m 2 , as well as the lifetime of 5000 hours. The open aperture ratio of each pixel is 45%.

A high-quality thin gate oxide for application in Si/SiGe heterostructure PMOSFETs is prepared by nanometre silicon wet oxidation at 750 • C by taking full advantage of the peculiar phase in polysilicon thermal oxidation. The combination of low temperature and a short processing time prevents strain relaxation and Ge outdiffusion in the compressively strained SiGe channel. Its structural stability and interface quality are studied by x-ray double-crystal diffraction. Results of C-V characteristics and breakdown measurements indicate that the gate oxide exhibits a low fixed oxide charge density and a high dielectric breakdown field. Employing this gate oxide, Si/SiGe PMOSFETs with good output characteristics have been successfully fabricated.

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