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We systematically studied the influence of solvent vapor annealing on the molecular ordering, morphologies, and charge transport properties of poly(3-hexylthiophene) (P3HT) thin films embedded with preformed crystalline P3HT nanowires (NWs). Solvent vapor annealing (SVA) with chloroform (CF) was found to profoundly impact on the structural and morphological changes, and thus on the charge transport characteristics, of the P3HT-NW-embedded P3HT films. With increased annealing time, the density of crystalline P3HT NWs was increased within the resultant films, and also intra- and intermolecular interactions of the corresponding films were significantly improved. As a result, the P3HT-NW-embedded P3HT films annealed with CF vapor for 20 min resulted in a maximized charge carrier mobility of ~0.102 cm2 V−1 s−1, which is higher than that of pristine P3HT films by 4.4-fold (μ = ~0.023 cm2 V−1 s−1).

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