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All-optical logic circuits using surface plasmon polaritons have a potential for high-speed information processing with high-density integration beyond the diffraction limit of propagating light. However, a number of logic gates that can be cascaded is limited by complicated signal phase adjustment. In this study, we demonstrate a half-adder operation with simple phase adjustment using plasmonic multimode interference (MMI) devices, composed of dielectric stripes on a metal film, which can be fabricated by a complementary metal-oxide semiconductor (MOS)-compatible process. Also, simultaneous operations of XOR and AND gates are substantiated experimentally by combining 1 × 1 MMI based phase adjusters and 2 × 2 MMI based intensity modulators. An experimental on-off ratio of at least 4.3 dB is confirmed using scanning near-field optical microscopy. The proposed structure will contribute to high-density plasmonic circuits, fabricated by complementary MOS-compatible process or printing techniques.

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