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(Pb,La)(Zr,Ti)O3 (PLZT) films with thicknesses of 150 and 225 nm were prepared by the chemical solution deposition method on sputtered Pt/IrO2 coated on SiO2/Si wafers. The annealed films revealed two different microstructures: fined-grained and large-grained. The thinner film had the largest grain size and highest leakage current, whereas the thicker film had small grains and lower leakage. Atomic force microscope images showed that the thinner film had half-domed-shaped grains, which were about one-third thinner at the grain boundary triple points. These triple points also contained a nanocrystalline nonstoichiometric secondary phase, which contributed to high leakage. A model was developed showing differences in crystallization on the basis of grain growth and number of nuclei on the Pt surface. These results indicate the importance of controlling the film microstructure and its relationship to the film electrical properties.

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Several kinds of multilayer films were sputter deposited between iron metal and AlN at room temperature up to a total film thickness of about 1 μm. The formation of iron nitride at the interface was explicitly observed on the film with a single-layer thickness of about 6 nm by He ion yield x-ray absorption spectroscopy and conversation electron Mössbauer spectroscopy. The partial reduction of AlN to aluminum metal at the interface was also observed by x-ray photoelectron spectroscopy depth profile. Metal substitution between Fe and AlN occurred even at room temperature at the Fe/AlN interface.