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A 43pJ/cycle non-volatile microcontroller with 4.7μs shutdown/wake-up integrating 2.3-bit/cell resistive RAM and resillence techniques.

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today, with the low power embedded devices deployed for sensing, actuating and running intelligent decision-making algorithms. The advancement in wireless communication technologies such as WiFi, Bluetooth low energy, 4G-LTE, LoRaWAN and recently 5G millimeter wave communication coupled with huge boost in the computing capabilities enable these devices to exchange and process data both at the edge and cloud. This intelligent environment is now widely explored as the Internet of Things (IoT). One of the primary concerns in this development is to security. Most of the available protocols and encryption techniques for device authentication and data transfer are purely software measures, thus presenting an opportunity for a determined attacker to bypass those with higher computing power or uncover the secrets through information leakages in physical forms. Furthermore, software-driven security demands high system resources, which is unavailable in resource-constrained IoT devices, therefore necessitating robust hardware security solutions that can be integrated into those devices. On the other hand, globalization of the semiconductor industry supply chain mandates a careful auditing and trust management during the fabrication and system integration process, which can very well benefit from the inherent randomness in the manufacturing processes. Hence, hardware security research today predominantly focuses on designing security primitives that tap onto the manufacturing variations, thereby constructing primitives like true random number generator (TRNG), physical unclonable function (PUF), and cryptographic hash functions.The emerging nonvolatile memory (NVM) devices such as resistive random access memory (RRAM), spin-transfer torque magnetic random-access memory (STT-MRAM), spin-orbit torque magnetic random-access memory (SOT-MRAM), and ferroelectric field-effect transistors (FeFET) are currently explored for building beyond Von Neumann architectures. Among them, RRAM is well established today. It is a two-terminal device commonly known for its metal-insulator-metal structure. This device technology's strength is the available wide range of functional materials that can be engineered for reliable resistive switching. It includes binary transition metal oxides, 2D materials likeNowadays, advancements in the design of trusted system environments are relying on security provided by hardware-based primitives, while replacing resource-hungry software security measures. Emerging nonvolatile memory devices are promising candidates to provide the required hardware security functionalities at very low area-energy-runtime budget. Resistive random access memory (RRAM) offers high-density integration with outstanding performance among the state-of-the-art nonvolatile memory devices. The RRAM device technology is currently getting significant attention from both academia and industry for constructing beyond Von Neumann architectures. This technology's strength is its scalable two-terminal structure, the availability of wide range...