Hot carrier stress (HCS) induces significant degradation on the performance of 65nm RF n-MOSFET with minimum poly length (L poly ). Although the cutoff frequency (F t ) is very high (~212 GHz) for these devices, the high HCS degradation poses a challenge for RF application. Additional effort will be needed to improve the process and/or device to take full advantage of the record n-MOSFET performance.
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