In this article, we present an accurate characterization of the RF LDMOSFET transistors for the extracting of the large‐signal model. They are generally available encapsulated in package. A measurement of the package parameters are made only by removing the semiconductor chip. The transistor is then characterized by conventional method. The same component can be used in the desired function, thereby avoiding the technological dispersions. The LDMOSFET transistor used is a BLF2043F (NXP semiconductors). To validate our method, we implemented a 2.5‐GHz 10‐W power amplifier. The measured and simulated results match very well. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:575–579, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25800

This article provides simplified analytical expressions and methodology for predicting the power gain and output power of RF LDMOSFET power amplifier. This method avoids the use of the complex nonlinear device models and Harmonic Balance circuits simulators. For validation of our method, a 2.5 GHz‐10 W RF power amplifier is implemented. The measured, simulated and calculated results match very well.