In this research, a thin film of titanium dioxide was prepared as electron transporting layer to be used in perovskite solar cell simulation. The thin film TiO 2 was prepared under different lab conditions such as changing the chamber pressure from 2.0×10 -2 to 4.0×10 -2 mbar and changing the power of deposition device from 200 to 240 watts for different thickness ranging from 30 to 150 nm. Radio frequency magnetron sputtering method has been used to fabricate the layers under the mentioned laboratory conditions. Then, the band gap energy of the thin films was calculated by Tauc’s plot method. It was shown that the bands gap energy which is one of the contributing factors in solar cell characteristics, such as short-circuit current, open-circuit voltage, fill factor and solar cell efficiency, highly depends on laboratory conditions of preparing the thin film and it changes with changes in deposition parameters of the device. The simulated solar cells were considered as ZnO:Al/TiO 2 compact layer/CH 3 NH 3 SnI 3 /CuI/Au. Investigation on the effects of preparation conditions of TiO 2 on properties of the cell and perovskite soar efficiency was carried out using experimental data related to TiO 2 and extraction of data of other layers from authentic articles using comsol multiphysics software. In comparison with other preparation conditions, the prepared layer with 30 nm thickness under 240 watts device power and 3.5×10 -2 mbar chamber pressure had the best possible results. In this condition, perovskite solar cell characteristics obtained I s c = 22.368mA, V o c = 1.02mV, % FF = 80.522 and % PCE = 18.371.