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Синтезированы образцы твердых растворов (TlGaSe 2) 1−x (TlInS 2)x. Методом импедансной спектроскопии измерены частотные зависимости (2 • 10 1 −10 6 Гц) компонент полного комплексного импеданса и исследованы релаксационные процессы в зависимости от состава твердого раствора (TlGaSe 2) 1−x (TlInS 2)x в области растворимости (x = 0−0.4). С использованием метода эквивалентных схем замещения проанализированы полученные диаграммы на комплексной плоскости (Z ′′ −Z ′). В исследованном твердом растворе (TlGaSe 2) 1−x (TlInS 2)x при 400 K обнаружена аномалия в температурной зависимости электрической проводимости, выражающаяся в резком росте проводимости. Эта особенность связана с фазовым переходом в суперионное состояние.

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Phase transitions of powder Cu 4 SeTe have been studied by high temperature X ray diffraction in the temperature range 300-1125 K. The results demonstrate that the low temperature, hexagonal phase α Cu 4 SeTe (a = 4.1880 Å, c = 41.8531 Å, V = 636.71 Å 3 , sp. gr. P6 1 , Z = 6, ρ calc = 7.2622 g/cm 3 ) is a β Cu 2 Te based superstructure. Above 700 ± 3 K, Cu 4 SeTe transforms into a cubic (γ) phase (a = 6.0672 Å, V = 223.339 Å 3 , sp. gr. Pa3, Z = 4).

The processes of charge transport on alternating current in [Formula: see text] solid solutions have been studied. It has been established that in weak alternating electric fields, there is a hopping mechanism of charge transfer over localized states in the vicinity of the Fermi level. A quantitative assessment of parameters was made in the framework of the effective medium theory and the Mott approximation. The use of impedance spectroscopy methods in [Formula: see text] solid solutions in the frequency range of 25–106 Hz, at temperatures of 180, 240 and 300 K charge transfer processes has been investigated. It was found that at 300 K in the low-frequency region, there are additional contributions to the conductivity, which, apparently, is associated with diffuse ion transfer near the boundary of the solid electrolyte and the electrode. Impedance locus curves, at low frequencies and at a temperature of 300 K, are characteristic of Warburg diffuse impedance.