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Liquid phase diffusion experiments have been performed without and with the application of a 0.4 T static magnetic field using a three-zone DC furnace system. SiGe crystals were grown from the germanium side for a period of 72 h. Experiments have led to the growth of single crystal sections varying from 0 to 10 mm thicknesses. Examination of the processed samples (single and polycrystalline sections) has shown that the effect of the applied static magnetic field is significant. It alters the temperature distribution in the system, reduces mass transport in the melt, and leads to a much lower growth rate. The initial curved growth interface was slightly flattened under the effect of magnetic field. There were no growth striations in the single crystal sections of the samples.

The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72-hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field.

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This study was undertaken to examine the feasibility of growing CdZnTe by liquid phase electroepitaxy. Based on our successful LPEE system of GaInAs, a new crucible to grow CdZnTe was developed. The development presented numerous difficulties. The physical properties of CdZnTe make this material very difficult to grow. All components of the system were investigated. Electromigration of the solute across the solution carries species towards the growth interface. In liquid Cd-Zn-Te, the CdTe and ZnTe species remain associated, contrary to the GaInAs system. Experiments showed that LPEE growth of CdZnTe is possible and the electromigration mechanism functions well in the CdZnTe solution. Despite this, other problems remained with the new LPEE system. The preparation of the solution proved difficult without pressurizing the LPEE crucible. Control of the reaction required the use of pre-compounded CdTe and ZnTe. Proper control of the solution saturation is imperative to ensure minimal dissolution of the seed prior to growth initiation and a reasonable growth rate during growth. The solution remained an issue during the duration of growth due to the high vapor pressures of the constituents. Tellurium evaporation during growth could lower solution volume until electrical contact across the solution is broken. Careful preparation of appropriate solution volume was imperative for successful growth. In LPEE, a uniform electric current passage across the growth interface is necessary for uniform and stable growth interface. This requires the design of a uniform contact zone between the bottom graphite electrode and the seed crystal. The contact zone issue was not adequately resolved in this study. However, a number of successful growth runs were achieved despite the electrical contact problems. Results show that the LPEE of growth CdZnTe is feasible.