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A capacitivelly coupled plasma reactor was used for PECVD technology, where both silan and methane were introduced into the plasma reactor through the shower head. The concentration of species in the SiC films was determined by RBS and ERD. Chemical compositions were analyzed by IR spectroscopy. Film morphology was assessed by AFM The RBS results showed the main concentrations of Si and C in the films. The concentration of hydrogen was approximately 20 at. %. The films contain a small amount ofoxygen and nitrogen. IR results showed the presence ofSi-C, Si-O, Si-N, Si-H, N-H, C-H, C-N specific bonds. The AFMmicrographs revealed the film surface smooth and compact.

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