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Aspects of epitaxially grown indium antimonide (InSb) on InSb substrates (InSb-on-InSb) by molecular beam epitaxy (MBE) for the 2D focal plane arrays fabrication process have been described. The epitaxial growth offers possibility for complex structure production, and then such structures suppose more effective control of the thermal generation charge carriers as the detector temperature is raised above 80 K. Investigations of mid-wave infrared (MWIR) 320256 FPAs with 30 μm pitch and 640512 FPAs with 15 μm pitch based on InSb-on-InSb layers have shown high performance: the average detectivity at T = 77 K more than 21011 cmW-1Hz1/2, the average value of noise equivalent temperature difference (NETD) with a cold aperture of 60o at T = 77K was in the range of 10–20 mK. High quality thermal imaging images were obtained in real time mode.