No abstract

No abstract

No abstract

We report the first demonstration of metal-semiconductor field-effect transistors (MESFETs) made from GaAs structures grown with an alkylarsine source, tertiarybutylarsine (t-BuAsH2). MESFET fabrication was performed in parallel on t-BuAsH2 and arsine-grown wafers to enable direct comparison of device characteristics. The GaAs n+-n MESFETs made with t-BuAsH2 exhibited excellent saturation and pinch-off characteristics, and diode performance comparable to arsine-grown devices. Although the peak transconductance gm was lower than that achieved with the arsine sample, the form of the gm versus gate voltage curves for the t-BuAsH2-grown devices were characteristic of well-behaved GaAs MESFETs. These initial results demonstrate the capability of t-BuAsH2 for growing electronic device structures having good carrier transport properties and effective isolation layers.

The electronic and optical properties of III‐V materials can be engineered by materials growth and fabrication techniques with various degrees of freedom in design, such as in the bandgap, doping, and thickness of the material. These properties have been used to make state‐of‐the‐art high‐speed electronic circuits and optical devices suitable for a broad range of applications. AT&T is committed to these techniques of electronics and photonics to maintain its leadership in communications and information technology. In this paper, we review the use of III‐V compound semiconductors for ultra‐high‐speed electronics, in particular the heterostructure field‐effect transistor (HFET) and the heterojunction bipolar transistor (HBT), based on gallium arsenide (GaAs) and indium phosphide (InP) technology. We also discuss future trends, including the integration of electronic and optical functions on the same chip.