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In the transverse electric and magnetic field, in Hall regime the low-temperature impurity breakdown (IB) under transverse runway (TR) conditions is considered. The effect of the increase in the compensation degree on the IB and TR applied electric field ratio is studied at different values of the magnetic field. It is shown, that with the increase in the magnetic field critical electric fields relevant to IB and TR must tend to each other, while at the fixed magnetic field the IB critical field approaches the TR threshold field with the increase in the compensation degree. The obtained results are at variance with the well-known fact that the applied breakdown field tends to infinity at C 0 ! 1, that is to say when the concentration of free charge cariers tends to zero; in asymptotics the applied breakdown and threshold fields merge.

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