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<p>The absence of deep traps for electrons in the spectrum of As₄₀Se₃₀S₃₀ localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As₄₀Se₃₀S₃₀ films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.</p>

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