Two-step recessed SiGe-S/D pMOSFET [1] has been optimized with a combination of compressive stress liner. Optimization on source and drain overlap, defect control and elevated SiGe-S/D structure are discussed experimentally. As a result of the careful optimization, record high drive current of 714 �A/�m at Vdd=1.0V, Ioff =100 nA/�m at 24 nm gate length, is demonstrated.
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