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Hg1−xCdxTe samples with x = 0.38 and 0.57 fabricated by molecular beam epitaxy, both as‐grown and after annealing, were studied. Photoluminescence (PL) was measured in the temperature range 4.2 < T < 300 K. The PL peak energy was found to be less than that of the energy gap by a certain value δE that depended on temperature. This effect was attributed to recombination of excitons localized at composition non‐homogeneities. An analysis was carried out that provided a way for evaluation of a non‐homogeneity measure. The amplitude of the non‐homogeneities was shown to decrease by about 50% as a result of post‐growth annealing in a He atmosphere and Hg vapour.

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