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The objectives of this investigation are structural and physical characteristics of the n-Sii_Ge/n(p)-Si heterojunction under strong elastic deformation of Si1_Ge layers which gives rise to misfit dislocations in the heteroboundary region; the factors playing the main role in formation of the band structure of the system; the use of transmission electron microscopy and optical methods for determination of the phenomena connected with misfit dislocations in the grown epitaxial structure; the electrical characteristics of diode structures and the process of electron-hole recombination via dislocation states in a heterojunction.

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